Vishay / Siliconix SIHF6N65E-GE3

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

950V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1053pF @ 400V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

3.5V @ 360µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

450mOhm @ 7.2A, 10V

Series

CoolMOS™ P7

Power Dissipation (Max)

104W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO251-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V