Vishay / Siliconix SIHA17N80E-E3

Product Details

Rds On (Max) @ Id, Vgs

150mOhm @ 12.5A, 10V

Series

-

Power Dissipation (Max)

150W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-3PF

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3250pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Vgs(th) (Max) @ Id

4.5V @ 1mA

Operating Temperature

150°C (TJ)