Vishay / Siliconix SIDR668DP-T1-GE3

Product Details

Vgs(th) (Max) @ Id

4.5V @ 50µA

Operating Temperature

150°C (TJ)

Series

SuperMESH3™

Rds On (Max) @ Id, Vgs

3Ohm @ 1.25A, 10V

FET Type

N-Channel

Power Dissipation (Max)

45W (Tc)

Packaging

Tube

Supplier Device Package

I-PAK

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

386pF @ 50V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Base Part Number

STU3L