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Vishay / Siliconix SI7820DN-T1-E3
MOSFET N-CH 200V 1.7A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 103
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- DeepGATE™, STripFET™ VI
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 3A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.4W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- PowerFlat™ (2x2)
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 3.6nC @ 4.5V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 283pF @ 24V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- -
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- 6-PowerWDFN
- Base Part Number
- STL6
- Vgs(th) (Max) @ Id
- 1V @ 250µA (Min)