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Vishay / Siliconix SI7802DN-T1-GE3
MOSFET N-CH 250V 1.24A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 5.5mOhm @ 17A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.9W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® SO-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 30nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 12V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 13A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 1.4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)