Vishay / Siliconix SI4833BDY-T1-GE3

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1055pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

35.8A (Tc)

Part Status

Discontinued at Digi-Key

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

SOT-1210, 8-LFPAK33

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

19mOhm @ 10A, 10V

Series

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation (Max)

55W (Tc)

FET Type

N-Channel

Supplier Device Package

LFPAK33

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

17.3nC @ 10V