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Vishay / Siliconix SI4829DY-T1-GE3
MOSFET P-CH 20V 2A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 101
Product Details
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5860pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8
- Vgs(th) (Max) @ Id
- 1.6V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.55mOhm @ 15A, 4.5V
- Series
- TrenchFET® Gen III
- Power Dissipation (Max)
- 52W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® 1212-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 46nC @ 2.5V