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Vishay / Siliconix SI4464DY-T1-E3

MOSFET N-CH 200V 1.7A 8-SOIC

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
1868

Product Details

Series
OptiMOS™
Power Dissipation (Max)
100W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-TO252-3
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
80V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2410pF @ 40V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
73A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
3.5V @ 46µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
9.6mOhm @ 46A, 10V