Vishay / Siliconix SI4456DY-T1-E3

Product Details

FET Type

N-Channel

Supplier Device Package

8-VSONP (5x6)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

5070pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3.2mOhm @ 25A, 10V

Series

NexFET™

Power Dissipation (Max)

3.2W (Ta), 156W (Tc)