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Vishay / Siliconix SI3499DV-T1-GE3
MOSFET P-CH 8V 5.3A 6-TSOP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 12668
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 3.6W (Ta), 33W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® 1212-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 93.8nC @ 8V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2760pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 25A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 9.5mOhm @ 15.3A, 4.5V