Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SI2319DS-T1-E3
MOSFET P-CH 40V 2.3A SOT23-3
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 96637
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5590pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 35A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.4mOhm @ 20A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 3.7W (Ta), 52W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® 1212-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 183nC @ 10V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V