Vishay / Siliconix SI1013R-T1-GE3

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

965pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

-

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

78mOhm @ 1.8A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

330mW (Ta)

FET Type

P-Channel

Supplier Device Package

SC-89-6

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

31.1nC @ 8V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V