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Vishay / Semiconductor - Diodes Division VS-ETU3006S-M3
DIODE GEN PURP 600V 30A D2PAK
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 1.8
- Stock
- 11408
Product Details
- Current - Reverse Leakage @ Vr
- 33µA @ 1200V
- Voltage - DC Reverse (Vr) (Max)
- 1200V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 5A (DC)
- Series
- CoolSiC™+
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Cut Tape (CT)
- Voltage - Forward (Vf) (Max) @ If
- 1.8V @ 5A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Capacitance @ Vr, F
- 301pF @ 1V, 1MHz
- Supplier Device Package
- PG-TO252-2
- Reverse Recovery Time (trr)
- 0ns