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Vishay / Semiconductor - Diodes Division VS-2EFH02-M3/I
DIODE GEN PURP 200V 2A DO219AB
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- TO-277, 3-PowerDFN
- Capacitance @ Vr, F
- 400pF @ 5V, 1MHz
- Supplier Device Package
- TO-277B
- Current - Reverse Leakage @ Vr
- 1mA @ 60V
- Voltage - DC Reverse (Vr) (Max)
- 60V
- Current - Average Rectified (Io)
- 8A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 650mV @ 8A
- Packaging
- Digi-Reel®
- Diode Type
- Schottky
- Part Status
- Active