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Vishay / Semiconductor - Diodes Division VS-10ETF12-M3
DIODE GEN PURP 1.2KV 10A TO220AC
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 3.71
- Stock
- 99
Product Details
- Speed
- No Recovery Time > 500mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 1200V
- Series
- -
- Current - Average Rectified (Io)
- 2A
- Packaging
- Tube
- Operating Temperature - Junction
- -55°C ~ 175°C
- Diode Type
- Silicon Carbide Schottky
- Voltage - Forward (Vf) (Max) @ If
- 1.8V @ 2A
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-220-2
- Base Part Number
- GB02SLT12
- Capacitance @ Vr, F
- 138pF @ 1V, 1MHz
- Supplier Device Package
- TO-220AC
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 50µA @ 1200V