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Vishay / Semiconductor - Diodes Division UGB8JT-E3/81
DIODE GEN PURP 600V 8A TO263AB
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0
- Stock
- 665
Product Details
- Supplier Device Package
- TO-220AC
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 40µA @ 650V
- Speed
- No Recovery Time > 500mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Series
- -
- Current - Average Rectified (Io)
- 4A
- Packaging
- Tube
- Operating Temperature - Junction
- -40°C ~ 175°C
- Diode Type
- Silicon Carbide Schottky
- Voltage - Forward (Vf) (Max) @ If
- 1.75V @ 4A
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-220-2
- Base Part Number
- STPSC4
- Capacitance @ Vr, F
- 200pF @ 0V, 1MHz