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Vishay / Semiconductor - Diodes Division SE10FJHM3/I
DIODE GEN PURP 600V 1A DO219AB
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0
- Stock
- 48616
Product Details
- Supplier Device Package
- DO-220AA (SMP)
- Reverse Recovery Time (trr)
- 1.8µs
- Current - Reverse Leakage @ Vr
- 1µA @ 800V
- Voltage - DC Reverse (Vr) (Max)
- 800V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1A
- Series
- eSMP®
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 1A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-220AA
- Capacitance @ Vr, F
- 6pF @ 4V, 1MHz