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Vishay / Semiconductor - Diodes Division MURS360HE3_A/I

DIODE GEN PURP 600V 3A DO214AB

Manufacturer
Vishay / Semiconductor - Diodes Division
Datasheet
Price
0.26
Stock
0

Product Details

Package / Case
P600, Axial
Capacitance @ Vr, F
150pF @ 4V, 1MHz
Supplier Device Package
P600
Reverse Recovery Time (trr)
2.5µs
Current - Reverse Leakage @ Vr
5µA @ 100V
Voltage - DC Reverse (Vr) (Max)
100V
Speed
Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io)
6A
Series
-
Operating Temperature - Junction
-50°C ~ 150°C
Packaging
Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If
900mV @ 6A
Diode Type
Standard
Part Status
Active
Mounting Type
Through Hole