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Vishay / Semiconductor - Diodes Division FESB8JT-E3/45
DIODE GEN PURP 600V 8A TO263AB
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0.58
- Stock
- 0
Product Details
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 175°C
- Series
- Automotive, AEC-Q101
- Voltage - Forward (Vf) (Max) @ If
- 610mV @ 20A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Super Barrier
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Capacitance @ Vr, F
- -
- Supplier Device Package
- TO-252, (D-Pak)
- Current - Reverse Leakage @ Vr
- 100µA @ 45V
- Voltage - DC Reverse (Vr) (Max)
- 45V
- Current - Average Rectified (Io)
- 20A