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Vishay / Semiconductor - Diodes Division FESB16JT-E3/81
DIODE GEN PURP 600V 16A TO263AB
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0
- Stock
- 1498
Product Details
- Capacitance @ Vr, F
- -
- Supplier Device Package
- TO-263AB
- Reverse Recovery Time (trr)
- 300ns
- Current - Reverse Leakage @ Vr
- 100µA @ 1200V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 1200V
- Series
- Stealth™
- Current - Average Rectified (Io)
- 18A
- Packaging
- Digi-Reel®
- Operating Temperature - Junction
- -55°C ~ 175°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 3.3V @ 18A
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number
- ISL9R18120