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Vishay / Semiconductor - Diodes Division ESH2D-E3/52T
DIODE GEN PURP 200V 2A DO214AA
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0
- Stock
- 3570
Product Details
- Reverse Recovery Time (trr)
- 4µs
- Current - Reverse Leakage @ Vr
- 1µA @ 1000V
- Voltage - DC Reverse (Vr) (Max)
- 1000V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 2A
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Cut Tape (CT)
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 1A
- Diode Type
- Avalanche
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- SOD-57, Axial
- Capacitance @ Vr, F
- 20pF @ 4V, 1MHz
- Supplier Device Package
- SOD-57