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Vishay / Semiconductor - Diodes Division ES3DHE3_A/I
DIODE GEN PURP 200V 3A DO214AB
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0
- Stock
- 3500
Product Details
- Capacitance @ Vr, F
- -
- Supplier Device Package
- TO-252GE
- Reverse Recovery Time (trr)
- 25ns
- Current - Reverse Leakage @ Vr
- 10µA @ 200V
- Voltage - DC Reverse (Vr) (Max)
- 200V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 3A
- Series
- -
- Operating Temperature - Junction
- 150°C (Max)
- Packaging
- Cut Tape (CT)
- Voltage - Forward (Vf) (Max) @ If
- 930mV @ 3A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63