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Vishay / Semiconductor - Diodes Division EGF1BHE3_A/I
DIODE GEN PURP 100V 1A DO214BA
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0.2
- Stock
- 0
Product Details
- Supplier Device Package
- DO-214BA (GF1)
- Reverse Recovery Time (trr)
- 50ns
- Current - Reverse Leakage @ Vr
- 1µA @ 150V
- Voltage - DC Reverse (Vr) (Max)
- 150V
- Current - Average Rectified (Io)
- 1A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -65°C ~ 175°C
- Series
- Automotive, AEC-Q101, Superectifier®
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 1A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-214BA
- Capacitance @ Vr, F
- 15pF @ 4V, 1MHz