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Vishay / Semiconductor - Diodes Division BYM10-800HE3/96
DIODE GEN PURP 800V 1A DO213AB
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0.13
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 250ns
- Current - Reverse Leakage @ Vr
- 500nA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1A
- Series
- Automotive, AEC-Q101
- Operating Temperature - Junction
- -65°C ~ 175°C
- Packaging
- Tape & Box (TB)
- Voltage - Forward (Vf) (Max) @ If
- 1.2V @ 1A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-201AD, Axial
- Capacitance @ Vr, F
- 25pF @ 4V, 1MHz
- Supplier Device Package
- DO-201AD