Toshiba Semiconductor and Storage TTA0002(Q)

Product Details

Supplier Device Package

TO-3P-3L

Vce Saturation (Max) @ Ib, Ic

2V @ 500mA, 5A

Current - Collector (Ic) (Max)

12A

Series

-

Current - Collector Cutoff (Max)

100µA (ICBO)

Packaging

Tube

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 5V

Part Status

Last Time Buy

Voltage - Collector Emitter Breakdown (Max)

140V

Power - Max

120W

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Transistor Type

PNP

Operating Temperature

150°C (TJ)

Frequency - Transition

10MHz