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Toshiba Semiconductor and Storage TPWR8503NL,L1Q
MOSFET N-CH 30V 150A 8DSOP
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 1676
Product Details
- Series
- -
- Power Dissipation (Max)
- 30W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- LFPAK
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 54nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 7750pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 60A (Ta)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Vgs(th) (Max) @ Id
- 2.3V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.6mOhm @ 30A, 10V