Toshiba Semiconductor and Storage TPW4R50ANH,L1Q

Product Details

Rds On (Max) @ Id, Vgs

8.7mOhm @ 20A, 10V

Series

TrenchFET®

Power Dissipation (Max)

5.4W (Ta), 83W (Tc)

FET Type

N-Channel

Supplier Device Package

PowerPAK® SO-8

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1975pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8

Vgs(th) (Max) @ Id

2.8V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)