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Toshiba Semiconductor and Storage TPN8R903NL,LQ
MOSFET N-CH 30V 20A TSON
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.66
- Stock
- 2254
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2280pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 19A (Ta), 22A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 3V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.3mOhm @ 19A, 10V
- Series
- PowerTrench®, SyncFET™
- Power Dissipation (Max)
- 2.5W (Ta), 41W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-PQFN (5x6)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 37nC @ 10V