Toshiba Semiconductor and Storage TPN2R304PL,L1Q

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

150V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 75V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

4.1A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

67mOhm @ 4.1A, 10V

Series

PowerTrench®

Power Dissipation (Max)

2.5W (Ta), 5W (Tc)

FET Type

N-Channel

Supplier Device Package

8-SOIC

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V