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Toshiba Semiconductor and Storage TPN22006NH,LQ
MOSFET N CH 60V 9A 8-TSON
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 1618
Product Details
- Series
- -
- Power Dissipation (Max)
- 1W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- WMini8-F1
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 5.1nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 33V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 520pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Vgs(th) (Max) @ Id
- 2.5V @ 730µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 15mOhm @ 4A, 10V