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Toshiba Semiconductor and Storage TPN14006NH,L1Q
MOSFET N CH 60V 13A 8TSON-ADV
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 20µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 17.9mOhm @ 10A, 10V
- Power Dissipation (Max)
- 2.9W (Ta), 18.3W (Tc)
- Series
- Automotive, AEC-Q101
- Supplier Device Package
- DPAK
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 14nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 380pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9.2A (Ta), 23A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V