Toshiba Semiconductor and Storage TPN13008NH,L1Q

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1376pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7.8A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

9mOhm @ 12A, 10V

Series

-

Power Dissipation (Max)

890mW (Ta)

FET Type

N-Channel

Supplier Device Package

8-SOIC

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V