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Toshiba Semiconductor and Storage TPHR9203PL,L1Q

X35 PB-F POWER MOSFET TRANSISTOR

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
5040

Product Details

Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2635pF @ 50V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
78A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
4V @ 150µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
7.2mOhm @ 28A, 10V
Series
PowerTrench®
Power Dissipation (Max)
83W (Tc)
FET Type
N-Channel
Supplier Device Package
8-PQFN (5x6)
Packaging
Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs
24nC @ 6V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100V