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Toshiba Semiconductor and Storage TPH2010FNH,L1Q

MOSFET N-CH 250V 5.6A 8SOP

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

FET Type
N-Channel
Supplier Device Package
D-Pak
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
24nC @ 4.5V
Vgs (Max)
±12V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2417pF @ 15V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Part Status
Not For New Designs
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 10V
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
2V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
12.5mOhm @ 15A, 10V
Series
HEXFET®
Power Dissipation (Max)
87W (Tc)