Toshiba Semiconductor and Storage TPH2010FNH,L1Q

Product Details

FET Type

N-Channel

Supplier Device Package

D-Pak

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

24nC @ 4.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2417pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

61A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

12.5mOhm @ 15A, 10V

Series

HEXFET®

Power Dissipation (Max)

87W (Tc)