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Toshiba Semiconductor and Storage TPCF8A01(TE85L)
MOSFET N-CH 20V 3A VS-8
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- I-PAK
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 47nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1700pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 15A (Ta), 73A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.2mOhm @ 35A, 10V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 70W (Tc)