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Toshiba Semiconductor and Storage TPCC8008(TE12L,QM)
MOSFET N-CH 30V 25A 8TSON
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Power Dissipation (Max)
- 138W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D2PAK
- Packaging
- Cut Tape (CT)
- Drain to Source Voltage (Vdss)
- 100V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 2293pF @ 25V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 37A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Discontinued at Digi-Key
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 40mOhm @ 25A, 10V