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Toshiba Semiconductor and Storage TPCC8002-H(TE12LQM
MOSFET N-CH 30V 22A 8TSON
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1300pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 13A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 2.3V @ 200µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 16.9mOhm @ 6.5A, 10V
- Series
- U-MOSVI-H
- Power Dissipation (Max)
- 700mW (Ta), 22W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-TSON Advance (3.3x3.3)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 17nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V