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Toshiba Semiconductor and Storage TPCA8010-H(TE12L,Q
MOSFET N-CH 200V 5.5A 8-SOPA
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- 8-SOP
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 5V
- Vgs (Max)
- 20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1130pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 10.5A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 11.7mOhm @ 10.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 2W (Ta)