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Toshiba Semiconductor and Storage TPCA8007-H(TE12L,Q

MOSFET N-CH 100V 20A 8-SOPA

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
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Product Details

Rds On (Max) @ Id, Vgs
350mOhm @ 3.5A, 10V
Series
-
Power Dissipation (Max)
1.6W (Ta), 45W (Tc)
FET Type
N-Channel
Supplier Device Package
8-SOP Advance (5x5)
Packaging
Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
150V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
600pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
150°C (TJ)