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Toshiba Semiconductor and Storage TPC8212-H(TE12LQ,M
MOSFET 2N-CH 30V 6A SOP8
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 60V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 625pF @ 10V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 5A
- Part Status
- Obsolete
- Power - Max
- 450mW
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.173", 4.40mm Width)
- Vgs(th) (Max) @ Id
- 2.3V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 50mOhm @ 2.5A, 10V
- Supplier Device Package
- 8-SOP (5.5x6.0)
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 11nC @ 10V