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Toshiba Semiconductor and Storage TPC8211(TE12L,Q,M)

MOSFET 2N-CH 30V 5.5A SOP8

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
21mOhm @ 3A, 10V
Supplier Device Package
8-SOP (5.5x6.0)
Series
-
Gate Charge (Qg) (Max) @ Vgs
16nC @ 10V
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Packaging
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
840pF @ 10V
FET Feature
Logic Level Gate
Current - Continuous Drain (Id) @ 25°C
6A
Part Status
Obsolete
Power - Max
450mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.173", 4.40mm Width)
Vgs(th) (Max) @ Id
2.3V @ 1mA