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Toshiba Semiconductor and Storage TPC8026(TE12L,Q,M)

MOSFET N-CH 30V 13A 8-SOIC

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Rds On (Max) @ Id, Vgs
-
Power Dissipation (Max)
-
Series
-
Supplier Device Package
TO-220-3
FET Type
N-Channel
Drain to Source Voltage (Vdss)
330V
Packaging
Tube
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
-
Operating Temperature
-