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Toshiba Semiconductor and Storage TPC6006-H(TE85L,F)
MOSFET N-CH 40V 3.9A VS6 2-3T1A
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1430pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5.5A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 1.2V @ 200µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 40mOhm @ 2.8A, 4.5V
- Series
- U-MOSIII
- Power Dissipation (Max)
- 700mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- VS-6 (2.9x2.8)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 19nC @ 5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V