Toshiba Semiconductor and Storage TP89R103NL,LQ

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

25V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1040pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Part Status

Discontinued at Digi-Key

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.35V @ 25µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

7.7mOhm @ 20A, 10V

Series

HEXFET®

Power Dissipation (Max)

3W (Ta), 30W (Tc)

FET Type

N-Channel

Supplier Device Package

8-PQFN (3.3x3.3), Power33

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V