Toshiba Semiconductor and Storage TK8R2A06PL,S4X

Product Details

FET Type

P-Channel

Supplier Device Package

TO-220-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

11.5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

470mOhm @ 5.75A, 10V

Series

QFET®

Power Dissipation (Max)

120W (Tc)