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Toshiba Semiconductor and Storage TK7S10N1Z,LQ
MOSFET N-CH 100V 7A DPAK
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 3163
Product Details
- Series
- PowerTrench®
- Power Dissipation (Max)
- 3.8W (Ta), 55W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D-PAK (TO-252)
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 36nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 35V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1400pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 15A (Ta), 59A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 10mOhm @ 15A, 10V