Toshiba Semiconductor and Storage TK70D06J1(Q)

Product Details

Vgs(th) (Max) @ Id

2.3V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

75mOhm @ 1.9A, 10V

Series

U-MOSIII-H

Power Dissipation (Max)

700mW (Ta)

FET Type

N-Channel

Supplier Device Package

VS-6 (2.9x2.8)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

4.4nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

251pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.9A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6