Toshiba Semiconductor and Storage TK6A80E,S4X

Product Details

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.7Ohm @ 3A, 10V

Series

-

Power Dissipation (Max)

110W (Tc)

FET Type

N-Channel

Supplier Device Package

D-Pak

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

490pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V