Toshiba Semiconductor and Storage TK6A60W,S4VX

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

18.5nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

570pF @ 300V

FET Feature

Super Junction

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Stub Leads, IPak

Vgs(th) (Max) @ Id

3.7V @ 400µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

500mOhm @ 4A, 10V

Series

DTMOSIV

Power Dissipation (Max)

80W (Tc)

FET Type

N-Channel

Supplier Device Package

I-PAK