Toshiba Semiconductor and Storage TK65G10N1,RQ

Product Details

Vgs(th) (Max) @ Id

3.5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

3mOhm @ 20A, 10V

Series

Automotive, AEC-Q101, TrenchFET®

Power Dissipation (Max)

136W (Tc)

FET Type

N-Channel

Supplier Device Package

PowerPAK® 8 x 8

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

144nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

80V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8625pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN